Search results for: M. Scheib

Items from 1 to 15 out of 15 results

article

Pilot study on the effectiveness and students’ attitude towards undergraduate training provided by industry

M. Karl, M. Franz, T. Grobecker‐Karl, M. Scheib

European Journal of Dental Education > 22 > 3 > 174 - 178

Introduction Rapid developments in CAD/CAM technology necessitate the adaptation of curriculum content. Limited resources hinder institutions in holding state of the art equipment available for student training. Materials and Methods A workshop given by an industry partner was organised as part of the final pre‐clinical course in prosthodontics for the academic years 2015 and 2016. The workshop...

article

Relationship between previous experiences with abuse and the likelihood of doctor’s visit after a medical injury or illness

L. Aguerrevere, K. Amador, L. Clement, M. Scheib

Journal of Pain > 2013 > 14 > 4 Supplement > S17

article

Problem of catalyst ageing during the hot-wire chemical vapour deposition of thin silicon films

D. Hrunski, M. Scheib, M. Mertz, B. Schroeder

Thin Solid Films > 2009 > 517 > 11 > 3370-3377

The filament in a hot-wire chemical vapour deposition (HWCVD) reactor is an important component. When tantalum (Ta) filaments are used for the deposition of thin silicon films, strong degradation takes place: there is a large amount of silicon not only at the surface but also in the bulk of the tantalum catalyst. Ta–Si phases form on the filament surface and in the bulk, which can lead to a porous...

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Investigation of silicon contamination of Ta filaments used for thin film silicon deposition

D. Hrunski, B. Schroeder, M. Scheib, R.M. Merz, more

Thin Solid Films > 2008 > 516 > 5 > 818-821

After extensive utilisation of tantalum (Ta) catalyst filaments for hot wire chemical vapor deposition (HWCVD) of thin silicon films a strong degradation takes place. A high concentration of silicon was found not only on the surface but also in the bulk of the tantalum filament. Visual microscopic investigations, Secondary Ion Mass Spectrometry (SIMS), X-ray Diffraction (XRD) and Energy Dispersive...

article

Atomic vapor deposition of Ru and RuO2 thin film layers for electrode applications

C. Manke, S. Miedl, O. Boissiere, P.K. Baumann, more

Microelectronic Engineering > 2005 > 82 > 3-4 > 242-247

Ru and RuO ₂ thin films for advanced metal gate applications were deposited on 200mm SiO ₂ /Si substrate by the novel deposition technique atomic vapor deposition (AVD™). AVD™ was carried out in an Aixtron Tricent™ system using liquid delivery of the Ru precursor.The creation of Ru- and RuO ₂ -films is controlled by varying the O ₂ flow and deposition temperature. Ru...

article

Cathodic arc evaporation of (Ti,Al)N coatings and (Ti,Al)N/TiN multilayer-coatings-correlation between lifetime of coated cutting tools, structural and mechanical film properties

F.-R. Weber, F. Fontaine, M. Scheib, W. Bock

Surface & Coatings Technology > 2004 > 177-178 > Complete > 227-232

(Ti,Al)N and (Ti,Al)N/TiN multi-layer coatings were deposited by cathodic arc evaporation with a large area TiAl and/or Ti cathode. The ratio of Ti/Al varied between 50/50, 40/60 and 33/67. The goal was to determine the influence of the bias voltage, which varied between -30 and -125 V, on the lifetime of coated cutting tools under drilling conditions. Film orientation and compressive stress were...

article

Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers

G. Hoffmann, H.J. Schimper, C. Schwender, N. Herhammer, more

Journal of Crystal Growth > 2003 > 257 > 1-2 > 42-50

We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain. Layer compositions are determined and layer sequences are examined accurately...

article

Comparative study of the epitaxial growth of Cu on MgO(001) and on hydrogen terminated Si(001)

T. Mewes, M. Rickart, A. Mougin, S.O. Demokritov, more

Surface Science > 2001 > 481 > 1-3 > 87-96

A comparative study combining diffraction and scanning probe techniques of the epitaxial growth of Cu on hydrogen terminated Si(001) and on MgO(001) is reported. In the case of Cu on Si(001) a three dimensional growth mode with typical island dimensions of 10 nm is found. Growth of Cu on MgO(001) also yields a three dimensional growth. In order to achieve a flat Cu surface two different seed layer...

article

Phase separation in magnetron sputtered superhard BCN thin films

S. Ulrich, H. Ehrhardt, T. Theel, J. Schwan, more

Diamond & Related Materials > 1998 > 7 > 6 > 839-844

The similar crystalline structure of diamond and cubic boron nitride suggests the synthesis of superhard thin films containing boron, carbon and nitrogen. BCN thin films have been prepared by reactive r.f.-magnetron sputtering of a hexagonal boron nitride target in an argon/acetylene atmosphere of a constant pressure of 2 x 10 ^- ² mbar. A deposition temperature of 600 ^o C leads...

article

Enhanced optical absorption in hydrogenated microcrystalline silicon: an absorption model

F. Diehl, M. Scheib, B. Schröder, H. Oechsner

Journal of Non-Crystalline Solids > 1998 > 227-230 > Part 2 > 973-976

In this study we investigate the optical absorption and structural properties of hydrogenated microcrystalline silicon prepared by the hot wire deposition technique (hw-μc-Si:H). To understand the enhanced optical absorption present in the material, we describe the correlation between the structural properties and the optical absorption in the framework of a novel absorption model. The structure of...

article

Formation of nanocrystalline diamond by hydrocarbon plasma beam deposition

S. Sattel, H. Ehrhardt, J. Robertson, Z. Tass, more

Diamond & Related Materials > 1997 > 6 > 2-4 > 255-260

Diamond crystallites up to 40 nm in size have been grown from a highly ionised plasma beam of acetylene for ion energies close to 100 eV per C atom and substrate temperatures above 450 ^o C. This shows that diamond can be grown by physical vapour deposition from an ion-rich plasma as well as by chemical vapour deposition from a radical-rich plasma. The formation mechanism is argued to be one...

article

Abstracts of the 17th Annual Symposium on Computing in Anesthesia and Intensive Care

Marc J. Bloom, Vincenzo Lanza, Thomas P. Engel, Yoshinori Iwase, more

International journal of clinical monitoring and computing > 1997 > 14 > 2 > 113-142

article

Deposition of nanocrystalline silicon films (nc-Si:H) from a pure ECWR-SiH ₄ plasma

B. Schröder, M. Scheib, H. Oechsner

Journal of Non-Crystalline Solids > 1996 > 198-200 > Part 2 > 895-898

A novel plasma enhanced chemical vapour deposition (PECVD) technique employing electron cyclotron wave resonance (ECWR) for plasma excitation was used for the deposition of hydrogenated nanocrystalline silicon (nc-Si:H) films. nc-Si:H-films could be produced with large deposition rates up to 6.5 [angst ]/s with pure SiH ₄ as process gas in contrast to conventional glow-discharge technique...

article

Temperature dependence of the formation of highly tetrahedral a-C:H

S. Sattel, T. Gieβen, H. Roth, M. Scheib, more

Diamond & Related Materials > 1996 > 5 > 3-5 > 425-428

Deposition from a low pressure plasma beam source creates a highly tetrahedral form of hydrogenated amorphous carbon (ta-C:H)) which is analogous to the ta-C formed by deposition from a filtered cathodic arc or mass-selected ion beam. The properties of ta-C:H have been studied as a function of the substrate deposition temperatureT _s and ion energy using electron energy loss spectroscopy, X-ray...

article

Nucleation during deposition of hydrocarbon ions as a function of substrate temperature

S. Sattel, M. Weiler, J. Gerber, T. Giessen, more

Diamond & Related Materials > 1995 > 4 > 4 > 333-336

Hydrogenated carbon films were prepared from a highly ionized plasma beam source using acetylene. The films deposited at low temperatures have a very high sp ³ fraction, density, compressive stress and hardness. The sp ³ fraction, density and stress are found to fall sharply at about 530 K to values suggesting sp ² bonding. The transition is believed to be associated with a...

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