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We have successfully fabricated polycrystalline diamond rectifying junction devices on n-type (100) silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) using methane/hydrogen process gas and trimethyl borate and trimethyl phosphite dissolved in acetone as p- and n-type dopants, respectively. Impedance spectroscopy and current–voltage analysis indicates that the conduction is vertical...