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A novel analytical model for subthreshold slope of a generic double-gate MOSFET (DGMOSFET) with gate-to-source/drain underlap is proposed. The accuracy of the new model is verified based on comparisons with previously published models, experimental data and numerical simulation results. With the reduction in body thickness, an improvement in underlap independent gate (4T) DGMOSFET subthreshold slope...
A novel analytical model for subthreshold current of a generic double-gate MOSFET (DGMOSFET) with gate-to-source/drain underlaps is proposed. The accuracy of the new model is verified based on comparisons with previously published models and numerical simulation results. With the proposed current model, effectiveness of back gate biasing, back gate asymmetry, gate work function engineering, and gate...
This paper, presents an analytical modeling of electron density in the active silicon region, the effect of back gate bias on front gate threshold voltage and estimation of the subthreshold slop for Double Gate MOSFETs. The various analyses have been carried out for symmetric and asymmetric structures where the asymmetric nature has been considered by virtue of altering the back gate insulator thicknesses...
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