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In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented...
In this work, we study the resistive switching characteristics of two different resistive switching memory devices (SiNx and HfOx) with SiO2 tunnel barrier. The switching of the former and the latter is based on the movement of hydrogen ion and oxygen vacancies, respectively. For Cu/SiNx/SiO2/p+-Si device, the operating current is drastically reduced and nonlinearity of LRS is increased compared to...
Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics...
The Korea Superconducting Tokamak Advanced Research (KSTAR) device is an advanced superconducting tokamak to establish scientific and technological bases for an attractive fusion reactor [1]. In-vessel Vertical Coil (IVC) power supply has been developed for vertical stability and shape control of KSTAR plasma. IVC power supply in KSTAR is based on a single-phase full-bridge inverter. The output voltage...
The KSTAR(Korea Superconducting Tokamak Advanced Research) device needs a large pulse power to supply to a superconducting magnet power supply(MPS) and a heating device to generate plasma and restrict plasma.
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