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In order to achieve aggressive scaling of the equivalent oxide thickness (EOT) and simultaneously reduce leakage currents in logic devices, silicon-based oxides (SiON / SiO2) have been replaced by physically thicker high-κ transition metal oxide thin films by many manufacturers starting from the 45 nm technology node. CMOS process compatibility, integration and reliability are the key issues to address...
Atomically flat silicon surface constructed with atomic terraces and steps is realized by pure argon ambience annealing at 1200degC on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. Only the radical reaction based insulator formation technology such as oxidation utilizing oxygen radicals carried out at low temperature (400degC) can preserve the atomically flatness...
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