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In this work, the multiplicity of neutron-induced upsets of SRAMs with 130/180 nm technologies is analyzed by using several neutron beams and RTSER. The neutron peak-energy dependence of the ratio for MCU to the total number of upsets can be described by Weibull-type function with a threshold energy for the MCU. As a result of the 130nm SRAM test, the probability function of MCU can be approximated...
In recent CMOS devices, multi-cell error induced by cosmic neutron, in which memory state change extends over multiple memory cells, is becoming serious. However, its mechanism has not been clarified yet because conventional analysis by device simulation has not included multiple memory cells domain. Our novel method is to create the device model including multiple memory cells and perform 3D simulation...
A Monte-Carlo simulation code SEALER was developed for neutron-induced single event upset of semiconductor devices at the ground level, in which composite material effects are fully simulated. Any size and structures of 8 composite material such as Si, SiO2, Si3N4, Ta2O5, WSi2, Cu, Al, TiN can be included for analyses of nuclear spallation reactions and charge collection mechanisms. Some preliminary...
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