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Back-gated InGaAs-on-insulator lateral N+NN+ MOSFETs are successfully fabricated by direct wafer bonding and selective epitaxial regrowth. These devices were characterized using a revisited pseudo-MOSFET configuration. Two different transport mechanisms are evidenced: volume conduction in the undepleted region of the film and surface conduction at the interface between InGaAs and buried insulator...
Doped InGaAs were characterized using a revisited pseudo-MOSFET configuration. Two different conduction mechanisms were evidenced: volume and interface. The impact of film thickness, channel width and length is evaluated. Measurements at low temperatures complete the analysis.
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