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A2RAM belongs to the 1T-DRAM family and is a potential candidate to replace the traditional 1T/1C- DRAM [1-2]. In this paper, we propose a TCAD simulation [3] methodology to assess A2RAM performance, validated through experimental measurement. It is then used to provide further insight in A2RAM and optimization guidelines.
In this paper, a concept for a 1T-DRAM in AlGaN/GaN based HEMTs is presented for the first time – the Hetero-RAM (HRAM). This memory takes advantage of the natural coexistence of both hole and electron gases and uses hole gas transient and dynamic capacitive coupling effects. It is interesting to note that up to now the hole gas has been considered as parasitic, since it was seen to trigger hysteresis...
We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
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