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Ge channel is attracting much attention because of its inherent high mobility. The compressive strain, which is introduced by growing Ge layers on strain-relaxed SiGe buffer layers, is, moreover, able to increase the mobility significantly. Here, we studied the strain dependence of the hole mobility in strained-Ge modulation-doped (MOD) structures by fabricating Ge layers on planarized SiGe buffer...
In this paper we report on experimentally obtained enhancement of hole mobility and sheet carrier density in Ge QW modulation doped (MOD) SiGe heterostructure via implementation of symmetric double-sides modulation doping
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