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When a CuInS2 CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS 2 thin film with the lowest resistivity of 5.59 × 10 −2 Ωcm, its best result was as follows: V oc = 461 mV, I sc = 26.9 mA, FF = 0.685, η = 5.66% under the illumination of 100 mW/cm 2 . And its series resistance and lattice mismatch was...