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Monolithic integration of photonic devices with electronics has attracted interest and there has been growing interest in photonic devices based on Si-compatible materials. Ge has a bandgap of 0.67 eV at room temperature and high absorption coefficient in the range of 1.3 – 1.55 µm. Furthermore, when biaxial tensile stress is applied to Ge, it transforms from an indirect to a direct bandgap material...
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