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In this paper a low flicker-noise highly linear 5 GHz direct conversion receiver (DCR) has been proposed. A dynamic current injection (DCI) technique has been utilized in addition with a tuning inductor for output flicker noise (1/f) reduction. Derivative superposition (DS) technique has been used in the mixer circuit to enhance the linearity. The DCR has been designed and fabricated using TSMC 0...
This paper presents a design methodology and verification of a 2/5 GHz dual band digitally-controlled oscillator (DCO). The presented DCO employed two spiral inductors and a switching transistor between them to operate at two bands of frequency. The switch is controlled by a digital signal so that shifting from one band of frequency to another to control the operation of spiral inductors needs no...
This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator...
A digital-controlled oscillator (DCO) employing on-chip coplanar waveguide (CPW) resonator is proposed for 5 GHz-band wireless communication applications. A 10 bit DCO using on-chip designed, fabricated and tested. By comparing the measured results on the fabricated chip in 0.18 mum CMOS technology, it has noted that the proposed DCO employing on-chip CPW resonator is smaller in size and frequency-tuning...
In this paper, the one-sided directional slot dipole antenna with for 5 GHz-band application have been designed and experimentally verified. The antenna size is 22 mm times 29 mm, which is smaller than a patch antenna at the same frequency. The measured radiation patterns are in the good agreement with the simulation which shows the effectiveness of the presented technique to realize on-sided directional...
This paper presents a comparison between bipolar and NMOS transistor to get high linearity amplifier. Using bipolar transistor, the amplifier has high linearity, and it does not sensitive to component variations. High linear amplifier using bipolar transistor has been designed and was fabricated using TSMC 0.18 um CMOS 1P6M process. The high linearity amplifier exhibits measurements results as 10...
In this paper, transmission characteristics of the on-chip meander CPW resonator fabricated in TSMC 0.18 um CMOS process is first investigated experimentally and an equivalent circuit is developed. Later, we implemented on-chip CPW resonator to design a VCO for 5 GHz-band wireless applications. One of the advantages of the proposed VCO using on-chip CPW resonator in comparison to a LC-VCO is the chip...
High third-order intercept output point (OIP3) RF amplifier, suitable for cheap semiconductor technology is proposed. The circuit functionality simulated using Agilent ADS and parasitic components were taken into account using Assura RCX chip design software. Chip has designed for TSMC 0.35-um BiCMOS process. An OIP3 over +30 dBm was achieved with a gain of 8 dB, noise figure 5 dB, and a power consumption...
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