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This paper presents the design of a 2-16 GHz ultra wide band low noise amplifier (UWB LNA). The proposed LNA has a gain of 11.5 ± 0.85 dB with NF less than 2.82 dB. Good input and output impedance matching, good isolation and linearity are achieved over the operating frequency band. The proposed UWB LNA consumes 18.14 mW of power from 1.8 V supply. This UWB LNA is designed and simulated in 0.18 μm...
A design of high linearity (IIP3), low flicker noise (NF), high conversion gain (CG) double-balanced Gilbert-cell mixer (DBGCM) is presented. Since the performance of a direct conversion receiver (DCR) is strongly affected by linearity and flicker noise (1/f) of a mixer in receiving side, a hybrid technique of dynamic current injection (DCI), a tuned inductor in switching pair and direct superposition...
This paper describes the design of 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using 0.18-μm CMOS technology. The UWB PA proposed here employs cascode topology with a current-reused technique to enhance the gain at the upper end of the desired band, an inter-stage inductor, and a resistive feedback at the second stage to obtain the flatness gain. The measurement...
A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3-10.6 GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise...
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