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The properties of InAs epilayer grown on (001) InP substrates (oriented 2 o off (001) toward the [110] direction) using meta-organic chemical-vapor deposition (MOCVD) are reported. The epilayer of 17 nm thickness grown at 405 o C showed three kinds of misfit dislocation arrays. Their Burgers vectors in all cases were of the form a/2<101> inclined 45 o to the interface...