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We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
In this paper we report on the analysis of molecular beam epitaxy (MBE) grown GaAs and InGaAs capping bilayer QD laser material via a number of characterization techniques. The InGaAs capped bilayer QD lasers extends the room temperature lasing wavelength to 1.45μm. The further analysis of the materials using the multi-section technique allows the gain and absorption spectrum to be obtained under...
The authors have developed a W-band monolithic two-stage conductor-backed coplanar waveguide (CBCPW) low-noise amplifier using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices. The amplifier exhibits a noise figure of 4.2-4.8 dB with an associated gain of 12 dB from 92 to 96 GHz. The circuit was tested using a W-band on-wafer noise figure measurement system. The result is encouraging and shows promise...
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