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Germanium is a suitable material as the buffer layer for the heteroepitaxial growth of InSb films on a Si(001) substrate. It reduces the large lattice mismatch of about 19.3% between Si and InSb to about 14.5%. InSb films grown on the islanded Ge buffer layers on a Si(001) substrate at elevated temperature are strongly oriented in <001> direction. The bias for heating the substrate was changed...
InSb films were grown on Si(001) substrates covered with Ge islands at 250-400 o C by molecular beam epitaxy (MBE), and characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and optical microscope. The Ge islands were formed on Si(001) substrates by the Ge deposition of about 100 monolayers (ML) at 450 o C. For the subsequent growth of InSb,...
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