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We fabricated $\beta $ -Ga2O3 photodetectors on bulk substrate and sapphire. Bulk Ga2O3 photodetector demonstrates the improved responsivity compared with the device on sapphire, due to the higher crystal quality in bulk material. Optical gain is achieved in both the devices. For the first time, we report that the Ga2O3 photodetector epitaxially grown on sapphire achieves a blueshift of bandgap in...
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