Search results for: Robert Illing
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Power MOSFETs integrated in modern Smart Power switches feature a substantial high current capability due to the very low value of their transconductance coefficient K. In this paper we demonstrate that the trend related to the increasing current capability implies a reduced thermal stability range which may lead to less robust devices. Electro-thermal simulations of two test chips featuring two different...
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Microelectronics Reliability > 2011 > 51 > 9-11 > 1913-1918
This paper focuses on optimization of bond wire positions as a method to improve thermal management of power semiconductors. For this purpose, robustness of a new low-voltage MOSFET generation with an optimized multiple bond wire arrangement and device shape is compared to an older device design with lower number of bond wires. 2D electrical simulation is used to evaluate the lateral distribution...
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A test chip with the purpose of thermal monitoring and analysis is implemented in a common-drain smart power trench MOSFET technology. For accurate evaluation of the junction temperature, small embedded sensor structures are introduced. One sensor is a bipolar transistor structure based on the linear temperature dependence of the base-emitter voltage. An existing solution is modified in order to fit...
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In this paper the reduction of the electromagnetic emission of automotive power ICs by shaping the edges of the switching signal is described. This technique is explained in detail and it is shown how an edge shaping concept was implemented into a high side switch. Using the voltage method defined in CISPR25 the conducted electromagnetic emission of this high side switch was measured. For this purpose...
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Microelectronics Journal > 2010 > 41 > 12 > 889-896
The relevance of thermally non-linear silicon material models for transient thermal FEM simulations of smart power switches (SPS) is proved by a power silicon test device consisting of two power transistors and eleven integrated temperature sensors distributed over the silicon die. The test device is heated up by turning on an integrated power transistor in short-circuit for several milliseconds at...
