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A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A GaN bi-directional switching diode exhibits its low Ron of 160 mΩ under 85 °C ambient temperature without an external heat sink. The compact 12mm × 25...
In this paper, we present a normally-off GaN-based transistor with extremely low on-state resistance fabricated by using Ge-doped n++GaN layer for ohmic contact. We developed a new GaN regrowth technique using Ge, which achieved extremely high doping level of 1 × 1020 cm−3, and thereby the lowest specific contact resistance of 1.5 × 10−6 Ω·cm2. Selectively deposited NiO gate using Atomic Layer Deposition...
Residual damage in ‘low-dose’ implanted and ‘high-temperature’ annealed Si have not been studied well due to lack of characterization technique and awareness of its risk for device degradation. In this study, we detected and characterized residual damage, which is existed in low-dose (1013cm−2) As implanted Si after high-temperature (1100°C) RTA in N2 and O2 mixed atmosphere. The characterization...
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