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This paper overviews recent attempts at co-integrating nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional Si devices in `More-than-Moore' domain and also explore novel physical principles in `Beyond CMOS' domain.
In this paper we overview recent attempts at co-integrating silicon nano-electro-mechanical systems (NEMS) with nanoelectronic devices aiming to add more functionalities to conventional electronic devices in `More-than-Moore' domain and also explore novel operating principles in `Beyond CMOS' domain.
Ab initio simulation of 'nanophonons' has been conducted for the first time for the H-terminated ultrathin Si films of 3 to 10 atomic layers in thickness and have revealed that the phonon bandgaps are formed as a result of the Si dimers on the surface.
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