The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Results of small-signal modeling of 0.5 um gate length pseudomorphic HEMTs are presented here. Modeling included scalability with respect to number of gate fingers, gate width and gate bias dependence of Equivalent Circuit Parameters (E.C.Ps). p-HEMTs with gate widths of 100 mum and 150 mum, each with varying number of gate fingers (2, 4, 6) keeping all other structural parameters constant were fabricated...
This paper describes the study of effect of variation of topological changes on parameters of pseudomorphic HEMTs. Devices with 2 gate fingers, having gate width of 150 ??m, source-drain spacing of 4 ??m and 3 ??m, and with two different gate structures, viz., ?? and T types were fabricated. On-wafer measurement of S-parameters for different devices was done from 100 MHz to 40 GHz under different...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.