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Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
We report studies of multi-carrier dynamics in PbS quantum dots. Nanosecond recombination times are observed for the 1Sel-1S3/2 transition and evidence of direct radiative recombination from 1Pel-1P3/2 is observed on picoseconds time scales.
We demonstrate infrared lasing operation for the first time of solution-processible colloidal nanocrystal quantum dots. The 1.53 mum emission wavelength of the whispering gallery mode laser was temperature insensitive up to 250 K.
We review progress in the development of an unconventional type of semiconductor laser that has become the focus of much attention in recent years. The vertical-external-cavity surface-emitting laser is a diode-pumped solid-state laser with a semiconductor quantum well gain medium. It overcomes the limitation of conventional edge- and surface-emitting semiconductor lasers, which can offer either diffraction-limited...
We report on the soliton operation of a passively mode-locked diode-pumped surface-emitting laser at a fundamental repetition rate of 10.014 GHz. The pulse duration was 486 fs with an average output power of 30.3 mW.
We report on the first demonstration of a passively mode-locked diode-pumped surface-emitting laser operating at a centre wavelength of 1518 nm. The peak power was 1.6 W at a fundamental repetition rate of 1.34 GHz.
Abstract. We discuss a mechanism that allows the formation of nearly transform-limited soliton-like pulses in passively mode-locked optically pumped external-cavity surface-emitting semiconductor lasers. It involves the interplay of positive dispersion and the nonlinear index changes in gain medium and saturable absorber, while ordinary solitons are based on dispersion and the Kerr effect. The obtained...
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