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This paper reviews recent development on compact modeling of multiple-gate MOSFETs. First, a core model based on the analytic potential solutions for the highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs has been presented. With the addition of quantum, short-channel effects, and capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model...
This paper reviews recent development on compact modeling of multiple-gate MOSFETs. Starting with a core model based on the analytic potential solutions for the highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs, an explicit solution to the implicit algebraic equations with high accuracy has been developed. With the addition of quantum, short-channel effects, and capacitance formulations,...
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