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Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.
In this paper, a detailed examination on TSV and cavity inductive coupled plasma (ICP) etching is presented. We investigated the relation such as etching loop number, TSV etching depth and etching rate. Due to particles knocked off from the hard mask and then fallen down to the TSV and cavity bottom, micro-masking issue becomes serious after ICP etching. In addition, parameters of isotropic etching,...
Heteroepitaxy of InP on Si by epitaxial lateral overgrowth (ELOG) using a thin seed layer of InP as starting material is investigated, with special attention given to the effect of the surface morphology of the seed and the mask layers on the quality of the ELOG layers. Chemical mechanical polishing (CMP) has been used to improve the morphological and optical quality of InP grown by hydride vapor-phase...
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