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The growing demand for battery powered mobile devices is a major driver for reducing power and continued area scaling in SOC chips. Continued scaling of the transistor and metal interconnection geometry is accompanied by increasing random Vt variation and increased wire routing resistance and capacitance variation in advanced technologies. Such variation degrades SRAM performance and its minimum operating...
A 128 Mb 0.07 6T high-density SRAM bitcell with write-assist circuitry has been successfully implemented using 16 nm high-k metal gate FinFET technology. This study proposes two write-assist techniques: 1) suppressed coupling signal negative bit-line (SCS-NBL) technique and 2) write recovery enhanced lower cell-VDD (WRE-LCV) technique to reduce the SRAM minimal supply voltage. The...
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