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Compressively strained Si1-xGex band-to-band tunneling field effect transistors with planar structure and HfO2/TiN gate stack have been produced and analyzed, with different Germanium concentrations of x = 0.35, 0.50 and 0.65. Simulations using a nonlocal band-to-band-tunneling model have been carried out to understand the switching behavior and its dependence on the material parameters. One would...
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