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We demonstrate high efficiency performance in two ultra-thin, Ge-free III–V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 × 106 cm−2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic...
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