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Silicon nanowires (SiNWs) were etched on Si (100), (110), and (111) substrates. Slanted nanowires with respect to the surface normal were produced on the Si (110) and (111) substrates, and vertical nanowires were produced on the Si (100) substrate. Photoluminescence spectroscopy exhibited luminescence lines attributed to oxide defects from the nanowires. A comparison of the transient photocurrent...
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