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The on operation of an amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) was studied employing a gated-four-probe (GFP) structure TFT to build a simple analytical model based on bias-dependent field-effect mobility . The electrical characteristics of the a-IGZO GFP TFT revealed that the contact resistances were negligible compared with the channel resistance. The bias-dependent...
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