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This paper presents a new millimeter-wave module concept, which is an integration of CMOS monolithic microwave integrated circuits (MMICs) and passive devices fabricated using a redistribution layer (RDL) technology. To realize a low-loss passive circuit, we introduced a multi-metal-layer for the RDL. The first metal layer was used as ground to shield from substrates. The upper metal layers form passive...
In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.
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