The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this research paper, the photoelectronic properties of laboratory fabricated silicon photodetector doped with indium or aluminum are measured and discussed. The effects of diffusion temperature, diffusion time, doping and reverse voltages on the photoelectronic properties are analyzed. It was found that the PN devices exhibit very good rectification properties at 1050 °C diffusion temperature and...
Silicon photodiodes have proved to be excellent detectors in the visible wave length range. On the other hand, high-performance photodetectors development remains needed. This research paper will focus on the calculation and improvement of photogenerated current of PN silicon photodetectors enhanced by the impurity photovoltaic effect. Various parameters that affect the behavior of the photogenerated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.