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Ultra-shallow ( 0.1 μm) junctions are needed for sub-0.25 μm MOSFET devices. These junctions can be made by implanting dopants into silicides and then drive out by RTA (Rapid Thermal Anneal). Compared to furnace processed junctions, however, the RTA processed junctions show a higher leakage current, coupled with a non-ideal diode behavior. In addition, good junctions processed by furnace annealing...