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In this paper, a novel method is introduced to fabricate nanoscale silicon oxide islands array. Rectangle islands patterns with edge length less than 100 nm are fabricated by traditional contact lithography and buffered oxide etching process. Precise sacrificial layer etching technique is used to control the size of islands from micro-scale to nanoscale accurately. This fabrication method is CMOS...
This paper propose a novel method of integration microfluidic sample delivery system with silicon nanowire (SiNW) biosensor device, which provide multiplexed detection capability as well as protect the fragile sensing elements from mechanical shocks and surrounding impurities. The SiNWs and PDMS chips were fabricated with complementary metal oxide semiconductor (CMOS) compatibility and low cost methods...
A field effect transistor (FET) sensor for pH detection was developed based on CMOS-compatible silicon nanowires. Optical lithography and anisotropic self-stop etching were employed to guarantee low cost and batch production for silicon nanowires. The pH nanosensor can detect the change of the hydrogen ion concentration effectively. In addition, it is demonstrated that the back gate electrode can...
A field effect transistor (FET) sensor for pH detection was developed in this paper based on complementary metal oxide semiconductor (CMOS)-compatible semiconducting nanowires. Optical lithography and anisotropic self-stop etching were employed to guarantee low cost batch production for silicon nanowires. Under environment relevant for sensing experiments, the transfer curves of silicon nanowires...
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