The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A compact STT (Spin-Transfer Torque)-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54 nm technology node. The basic switching performance (R-H and R-V) of the MTJs and current drivability of the access transistors were characterized at the single bit cell level. Through the direct access capability and normal chip operation in our STT-RAM test blocks, the switching behavior...
Recessed channel array transistors (RCAT) for DRAM are implemented with <100> uni-axial and {100} uni-plane channels for the first time. It is found that this structure improves the cell transistor drivability by 25% with the improvement being more effective in straight shape active RCAT than the diagonal shape active RCAT due to the larger dimension of the horizontal <100> axial channel...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.