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This paper proposes RTN-PUF, a novel PUF that utilizes random telegraph noise (RTN) of transistors as the physical uniqueness of individual devices. Our proposed RTN-PUF generates a response from a pair of ring oscillators (ROs) by comparing the numbers of frequency changes, which depend on the time constants of RTN. Due to the log-uniform distribution of the time constants, our RTN-PUF provides more...
Growth behavior of epitaxial CoSi 2 (001) films on clean Si(001) surfaces and oxidized Si(001) surfaces with oxygen coverages below 2ML has been investigated by scanning tunneling microscopy. In the solid-phase epitaxy of 3ML-thick Co on clean Si surfaces at 530 o C, rectangular-shaped CoSi 2 (001) three-dimensional (3D) islands elongated along the <110> direction were...
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