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A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO 2 /poly-Si/SiO 2 /Al layers. The poly-Si pad was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied,...