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A 900MHz surface wave antenna was used for plasma-enhanced chemical vapor deposition (PECVD) of silicon thin films in an H2+SiH4 discharge, with an emphasis on photovoltaic applications. Gas mixtures of 0.7–10% SiH4 at medium pressure (~100mTorr) were tested with an optimal substrate temperature of 285±15°C, producing nanocrystalline hydrogenated silicon (nc-Si:H) at rates up to 3nm/s, while amorphous...