Search results for: A.K. Gutakovskii

Items from 1 to 20 out of 21 results

article

Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts

I.B. Chistokhin, M.S. Aksenov, N.A. Valisheva, D.V. Dmitriev, more

Materials Science in Semiconductor Processing > 2018 > 74 > C > 193-198

The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In_0.52Al_0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380K was carried out. It was shown that the I-V dependences are well described by...

article

Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal of Crystal Growth > 2018 > 483 > C > 265-268

Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 −1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimentally demonstrated in this paper that a reverse process may occur in Ge/GeSi strained buffer/Si(001) heterostructures under certain conditions, namely, decoupling...

article

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

A.B. Talochkin, V.A. Timofeev, A.K. Gutakovskii, V.I. Mashanov

Journal of Crystal Growth > 2017 > 478 > C > 205-211

Structural features of Si₁₋_x₋_yGe_xSn_y alloy layers grown on Si by molecular-beam epitaxy are studied. These layers with the thickness of 2.0nm, the nominal Ge composition of x₀≈0.3, and the Sn-content of y≈2–6at.% have been grown at low temperatures (100–150°C). We have used high-resolution transmission electron microscopy to analyze atomic structure of grown layers and Raman spectroscopy to evaluate...

article

GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

E.A. Chusovitin, D.L. Goroshko, S.A. Dotsenko, S.V. Chusovitina, more

Scripta Materialia > 2017 > 136 > C > 83-86

A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500°C. The embedded NCs have a concentration of about 5.4×10¹⁰cm⁻², a mean height of 8.6nm and a mean lateral dimension...

article

Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

A.I. Nikiforov, V.A. Timofeev, A.R. Tuktamyshev, A.I. Yakimov, more

Journal of Crystal Growth > 2017 > 457 > C > 215-219

Gradual relaxation of elastic deformations in a silicon layer at the growth of a covering layer on strained layers was established. The dependence of the thickness of a silicon film, where full elastic strain relaxation occurs, on the germanium layer thickness was determined. The dependence of the critical thickness of 2D–3D transition of temperature and composition of the GeSiSn film on Si(100) was...

article

Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures

Y.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Thin Solid Films > 2016 > 616 > C > 348-350

High-resolution electron microscopy at the atomic scale has been applied to study the edge dislocation redistribution between interfaces in Ge/Ge_0.5Si_0.5/Si(001) heterostructures. It is demonstrated that such heterostructures relax in two stages: a network of edge dislocations is formed on the Ge/GeSi interface during heterostructure growth; after that, during additional annealing, some of these edge...

article

Surface-enhanced Raman spectroscopy of semiconductor nanostructures

A.G. Milekhin, L.L. Sveshnikova, T.A. Duda, N.A. Yeryukov, more

Physica E: Low-dimensional Systems and Nanostructures > 2016 > 75 > Complete > 210-222

We review our recent results concerning surface-enhanced Raman scattering (SERS) by confined optical and surface optical phonons in semiconductor nanostructures including CdS, CuS, GaN, and ZnO nanocrystals, GaN and ZnO nanorods, and AlN nanowires. Enhancement of Raman scattering by confined optical phonons as well as appearance of new Raman modes with the frequencies different from those in ZnO bulk...

article

Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov, more

Acta Materialia > 2013 > 61 > 14 > 5400-5405

High-resolution electron microscopy has been applied to study the dislocation redistribution between Ge and GeSi layers at the atomic scale. Ge _0.3 Si _0.7 (30nm in thickness) and Ge _0.5 Si _0.5 (10nm) buffer layers buried between the Si(001) substrate and the plastically relaxed Ge layer 0.5μm thick remain in a metastable (stressed) state during the growth of Ge/Ge-seed/Ge...

article

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(001) system and its role in the formation of the core structure of edge misfit dislocations

Y.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Acta Materialia > 2013 > 61 > 2 > 617-621

Ge-on-Si(001) films are grown by molecular beam epitaxy via a three-step epitaxial growth method (Ge/Ge seed/GeSi buffer/Si(001)). The dislocation structure of the Ge/GeSi buffer interface is studied by high-resolution electron microscopy. Misfit dislocations on the interface are edge dislocations and are aligned regularly with a period of 9–10nm. A variety of atomic structures of the dislocation...

article

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal of Crystal Growth > 2012 > 338 > 1 > 12-15

Dislocation structure of Ge _x Si _1−x films (x=0.4−0.8) grown by molecular-beam epitaxy on Si(001) substrates was studied by means of transmission electron microscopy. It was found that the density of edge MDs formed at the early stage of plastic strain relaxation in the films could exceed the density of 60° MDs. In our previous publications, a predominant mechanism underlying the early...

article

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal of Crystal Growth > 2010 > 312 > 21 > 3080-3084

The dislocation structure at the initial stage of relaxation of Ge _x Si _1−x films (x∼0.4–0.8) grown on Si (001) substrates tilted at 6° to the nearest (111) plane is studied. The use of Si substrates tilted away from the exact (001) orientation for epitaxial growth of Ge _x Si _1−x films (x≥0.4) allowed finding the basic mechanism of formation of edge dislocations that...

article

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

N.P. Stepina, A.V. Dvurechenskii, V.A. Armbrister, V.V. Kirienko, more

Thin Solid Films > 2008 > 517 > 1 > 313-316

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO ₂ , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density...

article

Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (001)→(111) Si substrates

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal of Crystal Growth > 2008 > 310 > 15 > 3422-3427

We have studied the dislocation structure at the initial stage of relaxation of Ge _x Si ₁₋ _x films (x∼0.4–0.5) grown on Si substrates tilted 6° about the 〈011〉 axis. It is demonstrated that edge misfit dislocations (MDs) in the miscut direction arise in the form of short segments on intersections of 60° MDs. As a result, the total length of the edge MDs in the direction of substrate...

article

Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Yu. B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal of Crystal Growth > 2006 > 297 > 1 > 57-60

Plastically relaxed GeSi films with a fraction of Ge ranging from 0.19 to 0.29 are grown on Si(001) substrates with the use of a low-temperature (350°C) buffer layer of Si. Their root mean square (RMS) surface roughness is in the 1.7–2.7nm range. Addition of Sb as a surfactant smoothing the surface of the stressed film during its growth is shown to reduce the surface roughness of the plastically relaxed...

article

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, more

Journal of Crystal Growth > 2006 > 293 > 2 > 247-252

Ge _x Si ₁₋ _x /Si(001) heterostructures with constant composition of Ge (x=0.19–0.32) are grown by low-temperature (300–400°C) molecular-beam epitaxy. Transmission electron microscopy reveals dislocation half-loops in the subsurface region of the stressed film, which is associated with nucleation of dislocations on elements of the three-dimensional relief on the surface of the growing...

article

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

A.V. Dvurechenskii, J.V. Smagina, R. Groetzschel, V.A. Zinovyev, more

Surface & Coatings Technology > 2005 > 196 > 1-3 > 25-29

Scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED) experiments were performed to study growth modes induced by hyperthermal Ge ⁺ ion action during molecular beam epitaxy (MBE) of Ge on Si(100). The continuous and pulsed ion beams were used. These studies have shown that ion beam bombardment during heteroepitaxy leads to decrease in critical film thickness...

article

Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, more

Journal of Crystal Growth > 2005 > 280 > 1-2 > 309-319

In previous publications [ Tuppen and Gibbings, J. Appl. Phys. 68 (1990) 1526; Hull et al., J. Appl. Phys. 70 (1991) 2052; Houghton, J. Appl. Phys. 70 (1991) 2136], the glide velocity of dislocations was analyzed and estimated in GeSi/Si (001) heterostructures grown at a temperature of 550°C. The method of growing GeSi films with the use of a low-temperature Si buffer has been developed recently and...

article

Heterostructures Ge _x Si ₁ _- _x /Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 ^o C) temperature: specific features of plastic relaxation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, more

Thin Solid Films > 2004 > 466 > 1-2 > 69-74

The specific features of plastic relaxation of Ge _x Si ₁ _- _x /Si(001) (x=0.18-0.62) heterostructures grown by molecular beam epitaxy at a low (350-400 ^o C) temperature with the use of a low-temperature buffer Si layer are considered. In the range of compositions up to x=0.3, Ge _x Si ₁ _- _x /Si(001) films can be grown with a density of threading...

article

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

R.G. Sharafutdinov, V.M. Karsten, S.Ya. Khmel, A.G. Cherkov, more

Surface & Coatings Technology > 2003 > 174-175 > Complete > 1178-1181

We discuss a new method for low temperature epitaxial growth of silicon films by gas-jet electron beam plasma chemical vapor deposition in SiH ₄ -Ar mixture. The growth rate up to 0.8 μm/min becomes possible at the substrate temperature below 650 ^o C, without using ultra-high vacuum chamber. Epitaxial Si films were deposited with the thickness up to 2-10 μm. The structure of the films...

article

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Yu.B. Bolkhovityanov, A.K. Gutakovskii, V.I. Mashanov, O.P. Pchelyakov, more

Thin Solid Films > 2001 > 392 > 1 > 98-106

The role of a low temperature Si buffer layer (LT-Si) in the process of plastic relaxation of MBE grown GeSi/Si (001) is studied. Probable sources and mechanisms of a generation of misfit dislocations (MD) are discussed. Transmission electron microscopic and X-ray diffraction techniques are used for studying 100 nm Ge _x Si ₁ _- _x films with LT-Si and those free of such a buffer...

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Keywords

B1. GERMANIUM SILICON ALLOYS (8)
A3. MOLECULAR-BEAM EPITAXY (6)
A1. MISFIT DISLOCATIONS (4)
A1. LINE DEFECTS (2)
A1. NANOSTRUCTURES (2)
A3. MOLECULAR BEAM EPITAXY (2)
AL. THREADING DISLOCATIONS (2)
CORE OF EDGE DISLOCATIONS (2)
GE ON SI(001) (2)
LOW TEMPERATURE GROWTH (2)
MECHANISM OF STRAIN RELAXATION (2)
A1. ATOMIC SCALE MICROSCOPY (1)
A1. LOMER DISLOCATION (1)
A1. MISFIT DISLOCATION NUCLEATION (1)
A1. MOVABLE EDGE DISLOCATION COMPLEX (1)
A1. SOLID SOLUTIONS (1)
A1. SURFACES (1)
A1. THREADING DISLOCATIONS (1)
A2. MOLECULAR BEAM EPITAXY (1)
A3. LOW-TEMPERATURE GROWTH (1)
A3. SURFACTANT (1)
AL. EDGE DISLOCATIONS (1)
ATOMIC CCALE (1)
B1. GE-ON-SI (1)
B2. SEMICONDUCTING SILICON COMPOUNDS (1)
B3. INFRARED DEVICES (1)
CRYSTAL STRUCTURE (1)
EDGE DISLOCATION COMPLEX (1)
FLATNESS (1)
GASB (1)
GE/SIO2 (1)
GERMANIUM (1)
GERMANIUM-ON-SILICON (1)
GJ-EBP-CVD (1)
HETEROEPITAXY (1)
HIGH-RESOLUTION ELECTRON TRANSMISSION MICROSCOPY (1)
ION BEAM-ASSISTED EPITAXY (1)
ION-ASSISTED DEPOSITION (1)
LOCALIZED PLASMON RESONANCE (1)
LOMER DISLOCATION (1)
MBE (1)
MEMORY (1)
MISFIT DISLOCATION NUCLEATION (1)
MISFIT DISLOCATIONS (1)
MOLECULAR BEAM EPITAXY (1)
NANOCRYSTALLINE MATERIALS (1)
NANOCRYSTALS (1)
NANOPARTICLES (1)
NANOSTRUCTURES (1)
NUCLEATION AND PROPAGATION OF EDGE DISLOCATIONS (1)
NUCLEATION OF EDGE DISLOCATIONS (1)
OXIDATION (1)
PHONONS. (1)
RAMAN SCATTERING (1)
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (1)
RELAXED GESI/SI (1)
SELF-ASSEMBLING EFFECTS (1)
SERS (1)
SILANE (1)
SILICON (1)
SILICON EPITAXY (1)
SOI (1)
TRANSMISSION ELECTRON MICROSCOPY (1)
ULTRATHIN LAYER (1)
UNIFORMITY (1)
more

Journal

Journal of Crystal Growth (9)
Thin Solid Films (4)
Acta Materialia (2)
Surface & Coatings Technology (2)
Materials Science & Engineering B (1)
Materials Science in Semiconductor Processing (1)
Physica E: Low-dimensional Systems and Nanostructures (1)
Scripta Materialia (1)

INFONA - science communication portal

Search results for: A.K. Gutakovskii

Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts

Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures

Surface-enhanced Raman spectroscopy of semiconductor nanostructures

Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(001) system and its role in the formation of the core structure of edge misfit dislocations

Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (001)→(111) Si substrates

Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation

Heterostructures Ge _x Si ₁ _- _x /Si(001) (x=0.18-0.62) grown by molecular beam epitaxy at a low (350 ^o C) temperature: specific features of plastic relaxation

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

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