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The bipolar amplification and charge collection of Planar Double-Gate MOSFETs and FinFETs with independent gates is investigated. The transient response of independent-gate devices is compared to that of conventional devices having the gates tied together. We show that the bipolar amplification is higher in independent-gate devices than in conventional devices for both positive and negative back gate...
The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.
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