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A systematic GaN single heterojucntion HEMT (SH-HEMT) physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The high frequency noise performance of AlGaN/GaN/AlGaN...
To reveal the influence of Al mole fraction on the microwave noise performance of AlxGa1-xN/GaN HEMTs, numerical analysis is performed on the intrinsic noise by reducing its value from 35% to 25% and 15% in this paper. A model based on measurement results is used and simulations are carried out by commercial TCAD soft Silvaco Atlas. The I-V curves and both of the gate and drain noise spectral density...
In this paper, a new method based support vector regression (SVR) is introduced for modeling noise parameters of FETs. Support vector machines (SVMs), which are based on the structural risk minimization (SRM) principle, have powerful generalization ability, and can handle problems with finite samples . By using the proposed method, the effect of the measurement errors can be excellent treated with...
A compact Ka-band transceiver module with two channels has been developed. This transceiver module consists of two DRO resources, E-plane waveguide filter, coupler, power dividers, over 200 components and 15 MMICs which conclude one mixers, one frequency multiplier, one low noise amplifier, five amplifiers and seven switches, and has superior performance of switch rise-time and fall-time less than...
Using the GaAs MMICs, other components and advanced package techniques, we realized a compact transceiver module with high power (about 35 dBm), receiver noise figure less than 4.5 dB and bandwidth 1% in Ka-band operating frequencies. This module consists of 15 MMICs and over 100 components, and demonstrates narrow bandwidth with high power in millimeter-wave transceiver module. This work has also...
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