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We propose, for the first time, an explicit semiconductor physics-based through-silicon via (TSV) capacitance–voltage (CV) model. The effect of TSV CV hysteresis is demonstrated in the model, and the TSV capacitance is modeled with respect to dc bias voltage and the dimension of the TSV. The proposed model is verified by comparison to the measurement results. The effect of hysteresis in the model...
Spurred by the industrial demands for terabyte/s bandwidth graphics module, high bandwidth memory (HBM) has been emerged to overcome the limitations of conventional DRAMs. Additionally, due to the fine pitch and high density interconnect routing between GPU and 4 HBMs in 2.5D terabyte/s bandwidth graphics module, HBM interposer has also been to the force. However, several signal integrity issues of...
As total system bandwidth increased, memory industry has been imposed to satisfy its requirements. At last, innovative next generation memory named high bandwidth memory (HBM) with extremely fine micro-bump pitch of its bottom die is introduced for terabytes/s bandwidth graphics module. To establish HBM based graphics module, it becomes essential to fabricate silicon interposer due to its capability...
With the advent of 2.5D and 3D IC, micro bumps has been highlighted as the core technology for realization of 2.5D and 3D IC. However, due to the difficulties about fabrication of reliable and cost-effective micro bumps, resulting in decrease in the final chip yield. In this paper, we propose a bump-less interconnection for high-speed signaling in 2.5D and 3D IC. In the proposed interconnection, high...
In this paper, crosstalk included eye diagram of high-speed and wide I/O interposer channels are simulated and analyzed. To analyze the crosstalk effect of various substrate channels, silicon, glass, and organic interposers are simulated and compared under the same physical dimensions. In addition, crosstalk included eye diagrams are accurately estimated in short time using 8 worst case input signals...
In this paper, we propose the structure of bump-less high speed channel on interposer in through-via based 2.5D or 3D integrated circuit (IC). Electrical characterization of the proposed structure is analyzed by simulation in the frequency-and time-domain. In order to discuss and analyze the electrical characteristics of the proposed structure in detail, the bump-less channel and the channel with...
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