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Diffusion barriers based on Ta and Ti related materials have been used in Cu interconnect technology to mitigate Cu diffusion into damascene structures. Along with the scaling of VLSI circuits, Cu interconnects scaling is demanded as well. To maximize the Cu volume in its trench for lower line resistance, the thickness of the diffusion barrier should be reduced accordingly. However, conventional barrier...
A high-speed data transmission system using half mode substrate integrated waveguide (HMSIW) is proposed in this paper. The HMSIW transmits the signal by TE0.5,0 mode so the channel bandwidth is from the cutoff frequency of TE0.5,0 mode to the cutoff frequency of TE1.5,0 mode. In contrast, the traditional SIW transmits the signal by TE10 mode and the channel bandwidth is from the cutoff frequency...
Substrate integrated waveguide (SIW) is regarded as an available interconnects solution for high-speed data transmission. In this paper, in order to further improve the data rate and bandwidth usage, an SIW interconnect system based on Quadrature Phase Shift Keying (QPSK) modulation and demodulation technique is proposed. The associated theoretical models validate the feasibility of the presented...
We have been using advanced modeling and simulation, especially first principles methods, as a valuable tool to design microelectronic materials systems. In this presentation, several successful examples will be given to demonstrate how advanced modeling and simulation through first principles have played an important role in materials design, processing, and reliability, and have positioned us far...
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