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Many big-data (BD) processors reduce power consumption by employing ternary content-addressable-memory (TCAM) [1-2] with pre-stored signature patterns as filters to reduce the amount of data sent for processing in the following stage (i.e., wireless transmission). To further reduce standby power, BD-processors commonly use nonvolatile memory (NVM) to back up the signature patterns of SRAM-based TCAM...
This paper demonstrates for the first time quantitative performance advantages of a zigzag 8T-SRAM (Z8T) cell over the decoupled single-ended sensing 8T-SRAM (DS8T) with write-back schemes, which was previously recognized as the most area-efficient cell under large σVTH/VDD conditions. Since Z8T uses only 1T for each decoupled read-port, faster 2T differential sensing (D2S) can be implemented within...
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby power. Experiments using a 0.25 mum 2.5V standard CMOS process with and without the additional threshold voltage adjustment implant on a 1Mb test chip demonstrate the effectiveness. A substantial standby power reduction by...
Crosstalk between bit lines leads to read-1 failure in a high-speed via-programmable read only memory (ROM) and limits the coverage of applicable code patterns. Due to the fluctuations in bit-line intrinsic and coupling capacitances, the amount of noise coupled to a selected bit line may vary, resulting in the reduction of sensing margin. In this paper, we propose a dynamic bit-line shielding (DBS)...
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