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Flash Lamp Annealing (FLA) is a well-known process for activation annealing in ultra-shallow junctions. Since our FLA tool has a flexible flash function that allows adjustments of the order of milliseconds, it is possible to realize precise diffusion control in the nanometer range. With soak pulse FLA the junction depth (Xj) can be easily controlled by the soak pulse time while achieving a high activation...
In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9.5 nm and 10.7 nm with sheet resistances of 620 ohms/sq. and 414 ohms/sq., respectively. Additionally, by reducing knocked-on oxygen during ion implantation,...
An InP(100) surface was bombarded with 1 and 3 keV Ar + and Xe + ions at normal incidence in ultra-high vacuum at 153 and 293 K. We determined the angular distributions of sputtered In and P particles using a collection method. The surfaces sputtered at 153 K were free of cones, irrespective of ion species and energy. The angular distribution of In was almost identical with that of...
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