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Comparisons between B, Ge+B and B18H22 implantations for pSDE were made. With Flash only the localized individual Xe-lamps signature was clearly detected by PLi and Rs measurements. Adding a spike first RTA anneal dramatically improved the global and local micro uniformity variation by 2-3x with either a 1000degC or 900degC spike 1st anneal. The highest quality B junctions were achieved with B18H22...
We report the advantage of the decaborane (B10Hx +) ion implantation for sub-40-nm-gate-length PMOSFETs compared with conventional boron monomer ion implantation into pre-amorphized layer. PMOSFETs with decaborane ion implantation have a 5% higher on-current than those with boron monomer into pre-amorphized layer. In addition, the threshold voltage fluctuation of the PMOSFETs is also smaller. This...
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