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This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on Si concentration in HfSiO as well as nitridation techniques is revealed. The EWF was extracted by both terraced oxide and terraced high-k techniques with the bulk and interface charges taken into account. The incorporation of Si in Hf-based...
This paper reports the fabrication of MOSFETs with dual metal gate electrodes. Low threshold voltage (Vt) was achieved using TaC for nFETs and MoNx for pFETs. The transistors show excellent Ion-Ioff performance with well-controlled short channel effects. Benefited from a novel approach in base oxide formation, high mobility at ~90% of poly/SiO2 was achieved on thick HfO2 (30A). Improvement in current...
A systematic study is performed on tantalum carbide (TaC) metal electrode on HfO2 and HfSiON dielectrics using conventional CMOS process. TaC's effective work function (EWF) is estimated to be 4.28 eV on HfO2 using Vfb~EOT methodology, where both interfacial oxide and high-K film thickness are varied and thus charge effect is corrected successfully. Investigation of the EWF dependence on underlying...
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