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This paper reports the reduced-stress GaN epitaxial growth on Si (111) using a porous GaN interlayer which is formed from GaAs layer by a novel nitridation process. Initially a 2μm thick GaAs layer is grown on a Si(111) substrate by MBE. Then, a GaN buffer layer of 20nm thick is grown on the GaAs layer at 550°C in a MOVPE reactor. The GaAs layer capped with the GaN buffer layer is annealed in NH ...