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Eu-doped silicon-rich silicon oxide (SRSO) films on P (100) Si substrate were deposited by electron beam evaporation (EBE). The effect of annealing procedure on the photoluminescence (PL) has been investigated in detail. Experimental results show that after 1100degC annealing at non-reductive atmosphere, the films are revealed to yield an intense broad band yellow light emission. PL spectra of the...
The photoluminescence of silicon-rich silicon nitride (SRSN) film was enhanced by coupling with the localized surface plasmon of Ag island film. It is found that the deposited Ag film induces an enhancement of excitation of SRSN film through increasing the absorption of SRSN film. Furthermore, it is demonstrated that the emission enhancement is much more decided by the excitation wavelength than by...
Non-stoichiometric silicon nitride films with different excess Si concentrations were deposited by plasma-enhanced chemical vapor deposition (PECVD) under different NH3/SiH4 gas flow ratios. Room-temperature electroluminescence (EL) was observed from the films. And the peak of EL spectra remains at 600 nm, irrespective of the increase of the Si concentrations. It was found that at high electric fields...
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