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Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C samples while UV transparency was high. This contradicts the literature works on the effect of Sn4+ doping in films obtained by other methods. Besides, X-ray diffraction patterns...
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