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We present a new modified approach in the forming of interdigital transducers (IDTs) on AlGaN/GaN heterostructure fully compatible with the process technology of HEMTs. The modified approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with "in-situ" SF6 surface plasma treatment under Schottky gate fingers of IDTs. It enables to excite surface acoustic...
The improved dc and microwave properties of 2 mum gate length AlGaN/GaN based HEMT structures were observed after applying of a novel approach in the forming of the Schottky gate interface. The new approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with "in-situ" SF6 surface plasma treatment under Schottky gate. A significant improvement in both the...
The paper reports microwave properties of AlGaN/GaN HEMT fabricated on sapphire substrate. The measured transition frequency as well as maximum frequency of oscillation was taken as a figure of merit for comparison of influence of different treatment. Using 2 mum length of gate electrode 7.425 GHz transition frequency as well as 23.437 GHz maximum frequency of oscillation was achieved. Significant...
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